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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops: Applied Physics Letters: Vol 103, No 15
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In situ stress measurements during MOCVD growth of thick N-polar InGaN: Journal of Applied Physics: Vol 122, No 8
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Shear stress of InGaN or AlGaN on the GaN surface as a function of the... | Download Scientific Diagram
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Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates | SpringerLink
The time evolution of the representative EQE spectra of the InGaN solar... | Download Scientific Diagram
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>
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a) Energy conversion efficiency as a function of stress time for the... | Download Scientific Diagram
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Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection | Scientific Reports
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