Boron Doping in Next-Generation Materials for Semiconductor Device | IntechOpen
Selective area isolation of β-Ga2O3 using multiple energy nitrogen ion implantation: Applied Physics Letters: Vol 113, No 17
Implantation damage formation in a-, c- and m-plane GaN - ScienceDirect
PDF) Ion implantation and annealing studies in III-V nitrides | Robert Karlicek, Jr. - Academia.edu
Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs | ACS Applied Materials & Interfaces
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam | Scientific Reports
PDF) NEW APPLICATIONS FOR ION IMPLANTATION: LIFE IN A VERTICAL CMOS WORLD, MATERIALS MODIFICATION and DEEP PROTON IMPLANTS | Michael Current - Academia.edu
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Low-energy Se ion implantation in MoS2 monolayers | npj 2D Materials and Applications
PDF) Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
1: Process flow for ion implanted CAVETs with no regrowth. (a)... | Download Scientific Diagram
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Status of ion implantation doping and isolation of III-V nitrides - UNT Digital Library
Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer - ScienceDirect
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
a Room-temperature PL spectrum and SEM image (inset) of a... | Download Scientific Diagram
Micro | Free Full-Text | Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes
Si and Mg Ion Implantation for Doping of GaN Grown on Silicon | Semantic Scholar
Doping and isolation of GaN, InGaN and InAlN using ion implantation - UNT Digital Library
